 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Power Transistors 2SD1475 www..com Silicon NPN triple diffusion planar type For power switching 0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 Unit: mm 4.20.2 s Features q q q q High-speed switching Satisfactory linearity of foward current transfer ratio hFE Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one screw (TC=25C) Ratings 80 60 6 8 4 1 35 2 150 -55 to +150 Unit V V V A A A W C C 7.50.2 16.70.3 3.10.1 4.0 1.40.1 1.30.2 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg 14.00.5 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 1 2 3 1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE1 (TC=25C) Symbol ICBO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf Conditions VCB = 80V, IE = 0 VEB = 6V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 3A VCE = 4V, IC = 1A IC = 2A, IB = 0.2A VCE = 12V, IC = 0.2A, f = 10MHz IC = 4A, IB1 = 0.4A, IB2 = - 0.4A, VCC = 50V 50 0.35 1 0.3 60 70 20 1.2 1 V V MHz s s s 320 min typ max 100 100 Unit A A V Rank classification Q 70 to 150 P 120 to 250 O 160 to 320 Rank hFE1 1 Power Transistors PC -- Ta 80 4 IB=40mA TC=25C 10 (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=2.0W) 2SD1475 IC -- VCE 12 VCE=4V IC -- VBE Collector power dissipation PC (W) www..com (1) TC=Ta 70 60 50 40 30 20 10 0 0 20 40 60 (2) (3) Collector current IC (A) 3 25mA 20mA 15mA Collector current IC (A) 35mA 30mA 8 25C 6 TC=100C -25C (1) 2 10mA 4 1 5mA 2 0 80 100 120 140 160 0 1 2 3 4 5 6 7 8 0 0 0.5 1.0 1.5 2.0 2.5 3.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=10 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 -25C TC=100C 25C 10000 hFE -- IC 1000 VCE=4V 300 100 30 10 3 1 0.3 0.1 0.01 0.03 fT -- IC VCE=12V f=10MHz TC=25C Forward current transfer ratio hFE 1000 300 100 30 10 3 1 0.01 0.03 TC=100C 25C -25C 0.1 0.3 1 3 10 0.1 0.3 1 3 10 Transition frequency fT (MHz) 3000 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob -- VCB 10000 10 IE=0 f=1MHz TC=25C ton, tstg, tf -- IC Area of safe operation (ASO) 100 30 Non repetitive pulse TC=25C Collector output capacitance Cob (pF) 3000 1000 300 100 30 10 3 1 0.1 Switching time ton,tstg,tf (s) 3 Collector current IC (A) 10 ICP IC 3 DC 1 0.3 0.1 0.03 0.01 t=1ms 1 tstg 0.3 ton tf 0.1 Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=-IB2) VCC=50V TC=25C 0 1 2 3 4 5 6 7 8 0.03 0.01 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) -- t 103 2SD1475 Thermal resistance Rth(t) (C/W) www..com 102 (1) Without heat sink (2) With a 100 x 100 x 2mm Al heat sink (1) 10 (2) 1 10-1 10-2 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
Price & Availability of D1475
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |